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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F G K 1 B K 6 Low on resistance : Ron=1 (Typ.) (IB=5mA) 2 5 4 DIM A B C D E D F G H I J K L 3 MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 J C R1 6 5 4 B Q1 Q2 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR E 1 2 3 MAXIMUM RATING (Ta=25 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg 0.8 ) RATING 50 20 25 300 0.9 150 -55 150 UNIT V V V mA W CHARACTERISTIC * Package mounted on a ceramic board (600 MARK SPEC TYPE KRC881T KRC882T KRC883T KRC884T KRC885T KRC886T hFE classification B MQB MRB MSB MTB MUB MVB 1 2 3 Marking h FE Rank Type Name 6 5 4 2002. 12. 5 Revision No : 2 I EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) L G J H TS6 Lot No. 1/2 KRC881T~KRC886T ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC881T KRC882T Input Resistor KRC883T KRC884T KRC885T KRC886T Transition Frequency Collector Output Capacitance * Characteristic of Transistor Only. Note) hFE Classification B:350 1200 fT * Cob VCE=6V, IC=4mA, VCB=10V, IE=0, f=1MHz R1 SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=50V, IE=0 IC=30mA, IB=3mA VCE=2V, IC=4mA MIN. 20 50 25 350 TYP. 2.2 4.7 5.6 6.8 10 22 30 4.8 MAX. 0.1 0.1 1200 MHz pF k UNIT V V V A V 2002. 12. 5 Revision No : 2 2/2 |
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